absolute maximum ratings parameter units i d @ v gs = 5.0v, t c = 25c continuous drain current 5.3 i d @ v gs = 5.0v, t c = 100c continuous drain current 3.4 i dm pulsed drain current 21 p d @ t c = 25c max. power dissipation 20 w linear derating factor 0.16 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 120 mj i ar avalanche current 5.3 a e ar repetitive avalanche energy 2.0 mj dv/dt peak d iode recovery dv/dt 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 0.98 (typical) g the logic level ?l? series of power mosfets are designed to be operated with level logic gate-to-source voltage of 5v. in addition to the well established characterstics of hexfets ? , they have the added advantage of providing low drive requirements to interface power loads to logic level ic?s and microprocessors. fields of applications include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gatedrive voltage. the hexfet technology is the key to international rectifier?s advanced line of logic level power mosfet transistors. the efficient geometry and unique processing of the hexfet achieve very low on-state resistance combined with high transconductance and great device ruggedness. . a www.irf.com 1 to-39 product summary part number bvdss r ds(on) i d IRLF120 100v 0.35 ? 5.3a features: repetitive avalanche ratings dynamic dv/dt rating low drive requirements execellent temperature stability for footnotes refer to the last page repetitive avalanche and dv/dt rated IRLF120 hexfet ? transistors 100v, n-channel thru-hole (to-39) ease of paralleling hermetically sealed fast switching speeds light weight pd-90639c
IRLF120 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 6.25 r thja junction-to-ambient ? ? 175 typical socket mount. c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 5.3 i sm pulse source current (body diode) ?? 21 v sd diode forward voltage ? ? 2.5 v t j = 25c, i s = 5.3a, v gs = 0v t rr reverse recovery time ? ? 220 ns t j = 25c, i f = 5.3a, di/dt 100a/ s q rr reverse recovery charge ? ? 1.1 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website. for footnotes, refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.13 ? v/c reference to 25c, i d = 250 a voltage r ds(on) static drain-to-source on-state ? ? 0.35 v gs = 5.0v, i d = 3.4a resistance ? ? 0.42 v gs = 4.0v, i d = 2.7a v gs(th) gate threshold voltage 1.0 ? 2.0 v v ds = v gs , i d = 250 a g fs forward transconductance 3.1 ? ? s v ds = 50v, i ds = 3.4a i dss zero gate voltage drain current ? ? 250 v ds = 100v, v gs = 0v ? ? 1000 a v ds = 80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 10v i gss gate-to-source leakage reverse ? ? -100 na v gs = -10v q g total gate charge ? ? 13 v gs = 5.0v, id = 5.3a q gs gate-to-source charge ? ? 2.4 nc v ds = 80v q gd gate-to-drain (?miller?) charge ? ? 7.1 t d (on) turn-on delay time ? ? 13 v dd = 50v, i d = 5.3a, t r rise time ? ? 73 v gs =5.0v, r g = 18 ? t d (off) turn-off delay time ? ? 41 t f fall time ? ? 27 l s + l d total inductance ? 7.0 ? c iss input capacitance ? 480 v gs = 0v, v ds = 25v c oss output capacitance ? 150 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 30 ? nh ns ? measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
www.irf.com 3 IRLF120 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
IRLF120 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10ms 100 s dc operation in this area limited by r ds (on) 1ms
www.irf.com 5 IRLF120 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - v gs
IRLF120 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
www.irf.com 7 IRLF120 footnotes: i sd 5.3a, di/dt 110a/ s, v dd 100v, t j 150c suggested rg =18 ? repetitive rating; pulse width limited by maximum junction temperature. v dd = 25 v, starting t j = 25c, l= 6.1 peak i as = 5.3a, v gs =5.0v, r g = ? case outline and dimensions ?to-205af (to-39) pulse width 300 s; duty cycle 2% legend 1- source 2- gate 3- drain ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2014
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